Polishing method for reducing liquid corrosion pits on chemical and mechanical polished surface of silicon substrate material

The invention relates to a polishing method for reducing liquid corrosion pits on a chemical and mechanical polished surface of a silicon substrate material, which adopts the three-step polishing method: coarse polishing: adopting a finished product of polishing liquid which adopts SiO2 particles wi...

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Bibliographic Details
Main Authors SHI XUNDA, LIN LIN
Format Patent
LanguageChinese
English
Published 20.07.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention relates to a polishing method for reducing liquid corrosion pits on a chemical and mechanical polished surface of a silicon substrate material, which adopts the three-step polishing method: coarse polishing: adopting a finished product of polishing liquid which adopts SiO2 particles with the particle size of 45-80nm as a solute and takes KOH as a solvent, leading the volume ratio ofthe finished product of the polishing liquid to deionized water to be 1: 10-35, and controlling the temperature at 11-40 DEG C; middle polishing: adopting the finished product of the polishing liquidwhich adopts the nano-SiO2 particles with the particle size of 5-25nm as the solute and the KOH as the solvent, leading the volume ratio of the polishing liquid to the deionized water to be 1: 15-40 and controlling the temperature at 11-40 DEG C; fine polishing: adopting the finished product of the polishing liquid which adopts the nano-SiO2 particles with the particle size of 5-25nm and the NH4OH as the solvent, leading t
Bibliography:Application Number: CN20081239456