Semiconductor devices and methods of forming the same

Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide...

Full description

Saved in:
Bibliographic Details
Main Authors PARK JUN WOONG, LEE HYE LAN, CHO HAG JU, HONG HYUNG SEOK, HYUN SANG JIN, CHOI SI YOUNG, NA HOON JOO, LEE HYO SAN, SHIN YU GYUN, SEO KANG ILL
Format Patent
LanguageChinese
English
Published 09.06.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide layer is greater than a formation-free energy of the metal oxide layer at a process temperature of the annealing process.
Bibliography:Application Number: CN20091206176