Method for growing p-type AlGaN

• Main Authors: YANG ZHIJIAN, FANG HAO, ZHANG YANZHAO, SANG LIWEN, ZHANG GUOYI, QIN ZHIXIN, YU TONGJUN
• Format: Patent
• Language: Chinese; English
• Published: 09.06.2010
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention discloses a method for growing p-type AlGaN. The method comprises the following steps: introducing trimethylindium serving as an activating agent while growing a p-type AlGaN layer by a metal organic chemical vapor deposition method, generally adopting high-purity hydrogen gas as carrier gas, trimethylgallium, trimethyl aluminium and ammonia gas as a Ga source, an Al source and an N source respectively and magnesium as a p-type doping agent, introducing the trimethylindium and other raw materials into a reaction chamber for epitaxially growing p-AlGaN, and generally controlling the flow rate of the trimethylindium to between 20 and 300 sccm. The method is simple and feasible, has obvious effect, can improve the surface appearance of the p-AlGaN, and reduces square resistance of the p-AlGaN; moreover, when applied to the preparation of a device, the method can effectively reduce the series resistance and cut-in voltage of the device, enhance the luminous intensity of the device, and particularly