Group iii nitride semiconductor light-emitting device and method for producing the same

• Main Authors: HATANO TAKASHI, KAMIYA MASAO
• Format: Patent
• Language: Chinese; English
• Published: 18.01.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for producing a Group III nitride semiconductor light-emitting device with a face-up configuration including a p-type layer and a transparent electrode composed of ITO is provided in which a p-pad electrode on the transparent electrode and an n-electrode on an n-type layer are simultaneousl...