Method for improving Schottky barrier of gallium nitride-based field effect transistor

• Main Authors: WEI KE, WANG XINHUA, ZHAO MIAO, LIU XINYU, ZHENG YINGKUI, LI CHENGZHAN
• Format: Patent
• Language: Chinese; English
• Published: 12.05.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a method for improving a Schottky barrier of a gallium nitride-based field effect transistor, belonging to the technical field of manufacture of semiconductor material device. The method comprises the following steps: cleaning the gallium nitride-based field effect transistor; and storing the cleaned gallium nitride-based field effect transistor under the protection of nitrogen at high temperature. By means of the invention, the height of the Schottky barrier of gallium nitride-based field effect transistor is increased, the reverse leakage f the Schottky barrier of gallium nitride-based field effect transistor is reduced, and the power characteristic and the breakdown characteristic of the gallium nitride-based field effect transistor are improved; therefore, the problem of parameter drift of the gallium nitride-based field effect transistor in the work is solved, and the stability and reliability of the gallium nitride-based field effect transistor are improved.