Copper-indium-selenium nanowire array and preparation method and application thereof

• Main Authors: ZHU CHANGFEI, LIU WEIFENG, ZHANG ZHONGWEI
• Format: Patent
• Language: Chinese; English
• Published: 18.07.2012
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; MANUFACTURE OR TREATMENT THEREOF; NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS; NANOTECHNOLOGY; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE; TRANSPORTING

The invention discloses a copper-indium-selenium nanowire array and a preparation method thereof. The method comprises the following steps: preparing a metal electrode layer on a glass or silicon slice substrate, using an ordered nano-template as growing mask to prepare the ordered nanowire structure copper-indium-selenium P-type absorbing layer material array on the metal electrode layer of the substrate through electrodeposition, and partly removing the template from top to bottom through chemical corrosion or physical etching method to expose the nanowire array. The array of the invention can be used to prepare the heterojunction solar cell with photoelectric translating performance.