Photoresist burr edge-forming method and TFT-LCD array substrate-manufacturing method

• Main Authors: HOU ZHI, ZHENG YUNYOU, ZHENG ZAIRUN, LI ZHENGXUN, LIU ZUHONG
• Format: Patent
• Language: Chinese; English
• Published: 20.01.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a photoresist burr edge-forming method and a TFT-LCD array substrate-manufacturing method. The TFT-LCD array substrate-manufacturing method comprises: forming a gate line and a gate electrode graph on a substrate; forming a data wire, a source electrode, a drain electrode and a TFT channel region, reserving photoresist, depositing a passivation layer and removing the photoresist together with the passivation layer on the photoresist through a lift-off stripping process; and smearing the photoresist, forming peak-shaped burr edges on the photoresist, depositing a transparent conductive film, forming a pixel electrode graph through the lift-off stripping process and directly connecting a pixel electrode with the drain electrode. The invention forms the photoresist burr edges through a third composition process and breaks the deposited transparent conductive film on the burr edges so as to effectively guarantee the quality of the lift-off stripping process, and has the advantages of simp