Method for preparing vanadium dioxide thin film with high temperature coefficient of resistance

• Main Authors: DAI JUN, LAI JIANJUN, HE SHAOWEI, YI XINJIAN
• Format: Patent
• Language: Chinese; English
• Published: 13.01.2010
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention discloses a method for preparing a vanadium dioxide thin film with high temperature coefficient of resistance, which can be used for uncooled infrared detection. The method comprises the following steps: on a silicon substrate on which Si3N4 thin film or SiO2 thin film is deposited, a vanadium oxide thin film which is 50-200nm thick is deposited by using a reactive ion bean sputtering method; after the thin film is naturally cooled, sample wafers are taken out, and annealing is then performed. The thin film prepared using the method of the invention has a nanometer structure with 5-20nm of average crystalline grain, and has appropriate square resistance with temperature coefficient of resistance (TCR) from -5%/K to -7%/K in semiconductor region; in addition the prepared thin film has as equivalent noise level as the common nanometer structure vanadium dioxide. Therefore, the vanadium dioxide thin film is quite a potential uncooled infrared detection material.