Deep-UV light-emitting diode and preparation method thereof

The invention provides a deep-UV light-emitting diode and a preparation method thereof. A low-temperature GaN insertion layer is used to replace an AlN/AlGaN superlattice or a high-temperature GaN insertion layer to grow the deep-UV light-emitting diode. The low-temperature GaN insertion layer is a...

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Bibliographic Details
Main Authors YANG ZHIJIAN, FANG HAO, SANG LIWEN, ZHANG GUOYI, QIN ZHIXIN, YU TONGJUN
Format Patent
LanguageChinese
English
Published 16.12.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention provides a deep-UV light-emitting diode and a preparation method thereof. A low-temperature GaN insertion layer is used to replace an AlN/AlGaN superlattice or a high-temperature GaN insertion layer to grow the deep-UV light-emitting diode. The low-temperature GaN insertion layer is a GaN with thickness of 20-50nm under the conditions of temperature being 400-900 DEG C, pressure being 30-200torr, and V/III being 1500-2500. The method can effectively lower the dislocation density in an epitaxial AlGaN layer and a quantum well, and improves the surface planeness. The prepared LED component has smooth surface, better crystal quality, starting voltage reduction, and smaller serial resistances of the component; and the electroluminescene peak value is ranged from 300nm to 370nm.
Bibliography:Application Number: CN20081114597