Gallium nitride crystals and wafers and method of making

A crystal comprising gallium nitride is disclosed. The crystal has at least one grain having at least one dimension greater than 2.75 mm, a dislocation density less than about 10cm, and is substantially free of tilt boundaries.

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Bibliographic Details
Main Author HUICONG HONG
Format Patent
LanguageChinese
English
Published 18.11.2009
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:A crystal comprising gallium nitride is disclosed. The crystal has at least one grain having at least one dimension greater than 2.75 mm, a dislocation density less than about 10cm, and is substantially free of tilt boundaries.
Bibliography:Application Number: CN2007849761