Low-frequency high dielectric reactance reduction ceramic material and preparation method thereof

The invention discloses a low-frequency high dielectric reactance reduction ceramic material and a preparation method thereof. The reduction ceramic material consists of a main crystal phase and a modified additive. The structural formula of the reduction ceramic material is ((1-a) (Ba1-xCax)A(Ti1-y...

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Bibliographic Details
Main Authors LI JUAN, SONG YONGSHENG, REN HAIDONG
Format Patent
LanguageChinese
English
Published 18.11.2009
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Summary:The invention discloses a low-frequency high dielectric reactance reduction ceramic material and a preparation method thereof. The reduction ceramic material consists of a main crystal phase and a modified additive. The structural formula of the reduction ceramic material is ((1-a) (Ba1-xCax)A(Ti1-yZry)BO3).a R2O3, wherein (Ba1-xCax)A(Ti1-yZry)BO3 is the structural formula of the main crystal phase and R2O3 represents the modified additive; calculated by molecular fraction, the main crystal phase is 93 to 98 percent, wherein A/B is larger than 1.00 but smaller than 1.02, x is larger than 0.3 but smaller than 1.2, and y is larger than 13 but smaller than 20, and the modified additive is 2 to 7 percent, namely the value of a is 2 to 7 percent. In the preparation method of the reduction ceramic material, secondary calcination treatment is conducted. The ceramic dielectric material conforms to the ceramic dielectric property of Y5V, has the advantages of uniform material, even particle size distribution, high dis
Bibliography:Application Number: CN20091147599