Single-chip white light-emitting diode (LED) and preparation method thereof

• Main Authors: YANG ZHIJIAN, TAO YUEBIN, FANG HAO, LI DING, SANG LIWEN, ZHANG GUOYI
• Format: Patent
• Language: Chinese; English
• Published: 14.10.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a single-chip white light-emitting diode (LED) and a preparation method thereof. The LED comprises a photoluminescence layer, an n-type ohm contact layer, an active layer and a p-type ohm contact layer which are sequentially stacked, wherein the active layer is a quantum well which can emit near ultraviolet wave bands of 370nm-420nm; and the photoluminescence layer is an undoped gallium nitride (GaN) layer emitting yellow-green fluorescence by near ultraviolet excitation. The photoluminescence layer is formed according to a characteristic that a Ga vacant position and oxygen-doping nitrogen-substituting pair in a GaN material can be excited by near ultraviolet to emit yellow-green light, and a plurality of defects are overcome by increasing the ammonia gas source flow rate when the GaN layer is grown and improving the V/III ratio to 4000-9000 or reducing the growth temperature to 900 DEG C-1050 DEG C. The LED device can emit white light only by a single chip and has a simple preparatio