Method for producing small-sized tin indium oxide nano-wire material in low-temperature

• Main Authors: CHEN KUNJI, SUN HONGCHENG, GAN XINHUI, CHEN GURAN, XU JUN, XU LING, GUO SIHUA, LIU YU, WAN NENG, LIN TAO
• Format: Patent
• Language: Chinese; English
• Published: 19.08.2009
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention relates to a method for preparing small size indium tin oxide nanowire materials at low temperature, belonging to the technical field of photoelectronic device materials. The method mainly comprises the following steps: a target and a substrate are installed in a cavity of an electron beam evaporimeter; the cavity is closed, vacuumized and baked; electron beam spots are adjusted to shine on the surface of the ITO target and the electron beam current is adjusted so that the deposition rate of the target on the substrate is 0.2-0.5nm/s after evaporation; the evaporation is stopped when the depth of the deposition on the substrate meets the requirement, and the preparation is finished after cooling. The method utilizes the conventional electron beam evaporation device to prepare the small size ITO nanowire materials at low temperature. The obtained nano materials not only have good field emission characteristics and anti-reflection characteristics, but also are even, controllable and low in price,