Method for producing molecular-beam epitaxy grade high-purity gallium

• Main Authors: LU SENYUN, LIU WENBING, LU QINJIAN, ZHANG CHANGPING, FAN JIAHUA
• Format: Patent
• Language: Chinese; English
• Published: 23.06.2010
• Subjects: APPARATUS THEREFOR; CHEMISTRY; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; FERROUS OR NON-FERROUS ALLOYS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; METALLURGY; PRETREATMENT OF RAW MATERIALS; PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY ORREFINING OF METALS; PRODUCTION AND REFINING OF METALS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE; TREATMENT OF ALLOYS OR NON-FERROUS METALS

The invention discloses a method for preparing a molecular beam extending gallium metal, comprising the following steps: filtering the liquid gallium in vacuum by suction, thus removing solid particles enveloped in the liquid gallium and surface scum of oxide film; extracting liquid gallium chemically, thus removing zinc, copper and other impurities in the gallium; electrolyzing and refining the liquid gallium for further purification; using vertical temperature gradient freezing method for further purification; the surface of refined gallium is not protected by hydrochloric acid and is not treated by organic reagents and is protected in drying condition. The prepared gallium metal has high purity so that contents of impurity elements, including C, N, O, which can be detected by glow discharge mass spectrometry are all below the detection limit.