Method for calculating if silicon carbide deexcitation resistor satisfies temperature requirement by small-energy testing data

• Main Authors: MI JUNCAI, CHEN XINQI, ZHU SHIZHANG, WU KUAYU, CHEN FUSHAN
• Format: Patent
• Language: Chinese; English
• Published: 04.05.2011
• Subjects: COLORIMETRY; MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT; MEASURING; MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES; PHYSICS; RADIATION PYROMETRY; TESTING

The invention relates to a method for calculating temperature requirement met by a silicon carbide demagnetization resistor by using low-energy test data, solves the technical problem to provide a method for calculating temperature requirement met by a silicon carbide demagnetization resistor by using low-energy test data, and aims to judge whether the capacity of the silicon carbide demagnetization resistor meets the temperature requirement under maximum demagnetization energy with low cost. The method is convenient and practical, does not need to purchase special equipment, but can effectively eliminate potential safety hazard of large-sized generators. The method is divided into two special judgment methods, wherein, one judgment method adopts a surface maximum temperature rising method to judge that the silicon carbide demagnetization resistor meets the maximum energy demagnetization requirement, and the other judgment method adopts a surface mean temperature coefficient to judge that the silicon carbide