A method of ultra-shallow junction formation using si film alloyed with carbon

• Main Authors: YE ZHIYUAN, ZOJAJI ALI, CHO YONAH, KIM YIHWAN, SANCHEZ ERROL
• Format: Patent
• Language: Chinese; English
• Published: 17.06.2009
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950 DEG C so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000 DEG C and about 1100 DEG . In certain embodiments the substrate is heated to a temperature between about 1030 DEG C and 1050 DEG C. In certain embodiments, a structure having an abrupt p-n junction is provided.