Simplified technological process for doubling range interval

A method for fabricating a semiconductor device (100) comprises patterning a layer of photoresist material (111) to form a plurality of mandrels (124). The method further comprises depositing an oxide material (126) over the plurality of mandrels (124) by an atomic layer deposition (ALD) process. Th...

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Bibliographic Details
Main Authors ZHOU BAOSUO, LARMAGONZ ALAPATI, ALDAWAN NIRUMIND
Format Patent
LanguageChinese
English
Published 06.04.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating a semiconductor device (100) comprises patterning a layer of photoresist material (111) to form a plurality of mandrels (124). The method further comprises depositing an oxide material (126) over the plurality of mandrels (124) by an atomic layer deposition (ALD) process. The method further comprises anisotropically etching the oxide material (126) from exposed horizontalsurfaces. The method further comprises selectively etching photoresist material (111).
Bibliography:Application Number: CN200780012525