Silicon-based double hetero-junction visible blind ultraviolet detector and manufacturing method thereof

• Main Authors: GU CHANGZHI, MEI ZENGXIA, GUO YANG, ZHANG TIANCHONG, DU XIAOLONG
• Format: Patent
• Language: Chinese; English
• Published: 15.04.2009
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention discloses a silicon-based double heterojunction visible-blind UV detector and a manufacturing method thereof. The detector comprises a p-Si substrate, an MgO insulating layer, an n-ZnO-based thin film layer, an n-type ohmic contact electrode and a p-type ohmic contact electrode. The manufacturing method of the detector comprises the following steps: the MgO insulating layer is grown on a clean Si substrate by an epitaxial growth device, and the n-ZnO-based thin film layer is grown on the MgO insulating layer; the n-type ohmic contact electrode is deposited on the n-ZnO-based thin film layer by the well-known photo lithography and the well-known metal thin film deposition method; and the p-type ohmic contact electrode is deposited on the back face of the Si substrate. By the manufacturing method, high-performance visible-blind UV detectors can be manufactured on semiconductor Si substrates which are cheap and have mature integrated process.