Manufacturing method of semiconductor device

• Main Authors: INOSAKA SHISATO, YAMAZAKI SHUNPEI, FURUYAMA MASAKI, SHIMOMURA AKIHISA, HIGA EIJI, MOMO JUMPEI
• Format: Patent
• Language: Chinese; English
• Published: 15.04.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a method of manufacturing semiconductor devices. Ions generated by prompting hydrogen gas and accelerated through an ion doping apparatus are used to irradiate the single-crystal semiconductor substrate, accordingly forming a damage zone with a large amount of hydrogen. After bonding the single-crystal semiconductor substrate and the support substrate, the single-crystal semiconductor substrate is heated to separate from the damage zone. A laser beam is used to irradiate the single-crystal semiconductor layer simultaneously during heating the single-crystal semiconductor layer separated from the single-crystal semiconductor substrate. By the irradiation melting of the laser beam, the single-crystal semiconductor layer is single-crystalized again, so as to recover its crystallinity, and then planarization to the surface of the single crystal semiconductor layer is performed.