Manufacturing method of semiconductor device
The present invention relates to a method of manufacturing semiconductor devices. Ions generated by prompting hydrogen gas and accelerated through an ion doping apparatus are used to irradiate the single-crystal semiconductor substrate, accordingly forming a damage zone with a large amount of hydrog...
Saved in:
Main Authors | , , , , , |
---|---|
Format | Patent |
Language | Chinese English |
Published |
15.04.2009
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | The present invention relates to a method of manufacturing semiconductor devices. Ions generated by prompting hydrogen gas and accelerated through an ion doping apparatus are used to irradiate the single-crystal semiconductor substrate, accordingly forming a damage zone with a large amount of hydrogen. After bonding the single-crystal semiconductor substrate and the support substrate, the single-crystal semiconductor substrate is heated to separate from the damage zone. A laser beam is used to irradiate the single-crystal semiconductor layer simultaneously during heating the single-crystal semiconductor layer separated from the single-crystal semiconductor substrate. By the irradiation melting of the laser beam, the single-crystal semiconductor layer is single-crystalized again, so as to recover its crystallinity, and then planarization to the surface of the single crystal semiconductor layer is performed. |
---|---|
AbstractList | The present invention relates to a method of manufacturing semiconductor devices. Ions generated by prompting hydrogen gas and accelerated through an ion doping apparatus are used to irradiate the single-crystal semiconductor substrate, accordingly forming a damage zone with a large amount of hydrogen. After bonding the single-crystal semiconductor substrate and the support substrate, the single-crystal semiconductor substrate is heated to separate from the damage zone. A laser beam is used to irradiate the single-crystal semiconductor layer simultaneously during heating the single-crystal semiconductor layer separated from the single-crystal semiconductor substrate. By the irradiation melting of the laser beam, the single-crystal semiconductor layer is single-crystalized again, so as to recover its crystallinity, and then planarization to the surface of the single crystal semiconductor layer is performed. |
Author | HIGA EIJI FURUYAMA MASAKI YAMAZAKI SHUNPEI MOMO JUMPEI SHIMOMURA AKIHISA INOSAKA SHISATO |
Author_xml | – fullname: INOSAKA SHISATO – fullname: YAMAZAKI SHUNPEI – fullname: FURUYAMA MASAKI – fullname: SHIMOMURA AKIHISA – fullname: HIGA EIJI – fullname: MOMO JUMPEI |
BookMark | eNrjYmDJy89L5WTQ8U3MK01LTC4pLcrMS1fITS3JyE9RyE9TKE7NzUzOz0spTS7JL1JISS3LTE7lYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GBoYmBpZGRoaOxsSoAQCuiivS |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
ExternalDocumentID | CN101409221A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_CN101409221A3 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 15:05:29 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | Chinese English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_CN101409221A3 |
Notes | Application Number: CN200810169390 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090415&DB=EPODOC&CC=CN&NR=101409221A |
ParticipantIDs | epo_espacenet_CN101409221A |
PublicationCentury | 2000 |
PublicationDate | 20090415 |
PublicationDateYYYYMMDD | 2009-04-15 |
PublicationDate_xml | – month: 04 year: 2009 text: 20090415 day: 15 |
PublicationDecade | 2000 |
PublicationYear | 2009 |
RelatedCompanies | SEMICONDUCTOR ENERGY LAB |
RelatedCompanies_xml | – name: SEMICONDUCTOR ENERGY LAB |
Score | 2.8383334 |
Snippet | The present invention relates to a method of manufacturing semiconductor devices. Ions generated by prompting hydrogen gas and accelerated through an ion... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Manufacturing method of semiconductor device |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090415&DB=EPODOC&locale=&CC=CN&NR=101409221A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQSTVPNEoyMbfUNbNIstAF5sRk3STjJANdo9REM2MTYJfDMg20wdnXz8wj1MQrwjSCiSELthcGfE5oOfhwRGCOSgbm9xJweV2AGMRyAa-tLNZPygQK5du7hdi6qMF6x5agHedqLk62rgH-Lv7Oas7Ots5-an5BtqAraQ0sjYwMHZkZWEHNaNA5-65hTqBdKQXIVYqbIANbANC0vBIhBqaqDGEGTmfYzWvCDBy-0AlvIBOa94pFGHR8E_NKQfsQwBsLFSBXPyvkpykUg9a35-eBDm7NL1JISQXlfVEGRTfXEGcPXaC18XA_xjv7IVxoLMbAAuz7p0owKACLANPExOQkYCWdbJKWaG4JbF4YJVkaAgUtDM2STCQZpHCbI4VPUpqBCzYxYmgqw8BSUlSaKgusX0uS5MABAwAaf354 |
link.rule.ids | 230,309,786,891,25594,76903 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5qFetNq6L1FUFyMti8k0MQu2mI2qRFovQWsmmCekhKkyL4651dG-tFb8su7Au-nf1255sBuMrMRKGaaUuGRS0JkZhKVKV9SckSQ9WQctg5EzgHoeE_aw9TfdqC90YLw-OEfvDgiIioFPFe8_N6vn7EcrlvZXVD37CqvPUixxUbdmwzxbnoDpzhZOyOiUiIQ0IxfHJYStq-rSjy3QZsmkgJOVV6GTBVyvy3SfF2YWuCvRX1HrQ-X7vQIU3mtS5sB6sPbyyusFftw3WQFEumQ-DCQuE79bNQ5kLF_NvLggVuLRfCLGPYP4BLbxgRX8Jh4581xiRcz1A9hDZy_-wIBDwC9CRJKRrpVMsT08brhUJtGSst2aDaMfT-7qf3X-MFdPwoGMWj-_DxBHaaTxJZP4V2vVhmZ2hra3rON-kLKRmBYg |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Manufacturing+method+of+semiconductor+device&rft.inventor=INOSAKA+SHISATO&rft.inventor=YAMAZAKI+SHUNPEI&rft.inventor=FURUYAMA+MASAKI&rft.inventor=SHIMOMURA+AKIHISA&rft.inventor=HIGA+EIJI&rft.inventor=MOMO+JUMPEI&rft.date=2009-04-15&rft.externalDBID=A&rft.externalDocID=CN101409221A |