Manufacturing method of semiconductor device
The present invention relates to a method of manufacturing semiconductor devices. Ions generated by prompting hydrogen gas and accelerated through an ion doping apparatus are used to irradiate the single-crystal semiconductor substrate, accordingly forming a damage zone with a large amount of hydrog...
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Main Authors | , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
15.04.2009
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention relates to a method of manufacturing semiconductor devices. Ions generated by prompting hydrogen gas and accelerated through an ion doping apparatus are used to irradiate the single-crystal semiconductor substrate, accordingly forming a damage zone with a large amount of hydrogen. After bonding the single-crystal semiconductor substrate and the support substrate, the single-crystal semiconductor substrate is heated to separate from the damage zone. A laser beam is used to irradiate the single-crystal semiconductor layer simultaneously during heating the single-crystal semiconductor layer separated from the single-crystal semiconductor substrate. By the irradiation melting of the laser beam, the single-crystal semiconductor layer is single-crystalized again, so as to recover its crystallinity, and then planarization to the surface of the single crystal semiconductor layer is performed. |
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Bibliography: | Application Number: CN200810169390 |