Method for fabricating a photovoltaic element with stabilised efficiency

• Main Authors: HAHN GISO, MELNYK IHOR, SCHUBERT GUNNAR, KAES MARTIN, HERGUTH AXEL
• Format: Patent
• Language: Chinese; English
• Published: 08.04.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for fabricating a photovoltaic element with stabilised efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilisation treatment step. The stabilisation treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50 DEG C, preferably 90 DEG C, more preferably 130 DEG C and even more preferably 160 DEG C and an upper temperature limit of 230 DEG C, preferably 210 DEG C, more preferably 190 DEG C and even more preferably 180 DEG C, and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g. a solar cell or a solar module having an efficiency which is stable at a value higher than t