Method for manufacturing a magnetic memory device and magnetic memory device

The invention relates to a manufacturing method for a magnetic memory and a magnetic memory which can reduce the write current deviation of the TMR element realize the miniaturization. The method for manufacturing a magnetic memory device which includes a TMR element, and the method includes: a step...

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Main Authors MATSUDA RYOJI, FUKUMURA TATSUYA, OSHITA HIROSHI, FURUTA HARUO, HIRANO SHINYA, UENO SHUICHI, HASEGAWA SHIN, CHIBAHARA HIROYUKI
Format Patent
LanguageChinese
English
Published 11.02.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:The invention relates to a manufacturing method for a magnetic memory and a magnetic memory which can reduce the write current deviation of the TMR element realize the miniaturization. The method for manufacturing a magnetic memory device which includes a TMR element, and the method includes: a step of forming a lower wiring layer; a step of forming an interlayer insulating layer on the lower wiring layer; a step of forming an opening in the interlayer insulating layer so that the lower wiring layer is exposed; a step of forming a barrier metal layer so that the interlayer insulating layer and an inner surface of the opening are covered; a step of forming a metal layer on the barrier metal layer so that the opening is embedded; a polishing step of removing the metal layer on the barrier metal layer through polishing using the barrier metal layer as a stopper so that a wiring layer that includes a metal layer being embedded in the opening and the barrier metal layer is formed; and an element fabricating step o
Bibliography:Application Number: CN200810129847