Method for controlling polysilicon removal

The invention is directed to a method of chemically-mechanically polishing a substrate comprising polysilicon and a material selected from silicon oxide and silicon nitride with a chemical-mechanical polishing system comprising an abrasive, a polyethylene oxide/polypropylene oxide copolymer, water,...

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Bibliographic Details
Main Author JOHNS TIMOTHY
Format Patent
LanguageChinese
English
Published 10.12.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention is directed to a method of chemically-mechanically polishing a substrate comprising polysilicon and a material selected from silicon oxide and silicon nitride with a chemical-mechanical polishing system comprising an abrasive, a polyethylene oxide/polypropylene oxide copolymer, water, and a polishing pad.
Bibliography:Application Number: CN200680044961