AlGaN/GaN HEMT multilayer field plate device of concave grid groove and manufacturing method thereof

• Main Authors: LIU XINYU, ZHENG YINGKUI, LIU GUOGUO
• Format: Patent
• Language: Chinese; English
• Published: 01.10.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to the technical field of microwave power device in semiconductor materials, discloses a AlGaN/GaN HEMT multilayer field board device of recessed grid, and meanwhile discloses a method for manufacturing AlGaN/GaN HEMT multilayer field board device of the recessed grid; on the basis of common AlGaN/GaN HEMT device manufacturing process, the method comprises the steps of photo-etching grid images after forming Ohm contact of a source electrode and a drain electrode, etching AlGaN extension layer of a part of the grid image, after evaporating grid metal, firstly manufacturing a grid connection field board and then a source connection field board to form the AlGaN/GaN HEMT multilayer field board device of the recessed grid. Utilization of the invention can efficiently improve puncturing characteristic, transconductance and threshold value voltage of the AlGaN/GaN HEMT device, and at the same time of improving the device plus, availably suppress phenomenon of current collapse of the AlGaN/GaN