Production method of SONOS flash memory

• Main Authors: XU DAN, CAI XINYU, QIU SHENGFEN, SUN PENG
• Format: Patent
• Language: Chinese; English
• Published: 20.08.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a method for manufacturing a SONOS flash memory, comprising the steps that: a dielectric layer- trapping charge layer-dielectric layer three-layer stacking structure, a first polycrystalline silicon layer and a semiconductor liner of a corrosion barrier layer are provided; the corrosion barrier layer, the first polycrystalline silicon layer and the dielectric layer- trapping charge layer-dielectric layer three-layer stacking structure are successively etched along the bit line direction, until the semiconductor layer is exposed, and an opening is formed; a source electrode and a drain electrode are formed on the semiconductor liner by the opening; the dielectric layer is formed in the opening and the corrosion barrier layer, and flattened until the corrosion barrier layer is exposed; the corrosion barrier layer is removed; second polycrystalline silicon layers are formed on the first polycrystalline silicon layer and the dielectric layer, and etched along the word line until the diele