Method for controlling ZnO nano-pole array density

The invention relates to a method for controlling the array density of ZnO nanometer columns and is characterized in that the concentration ratio ((Zn<2+>)/M<x +>))) of Zinc ions and M<x+> ions in a system of a composite sol is controlled, particle sizes and distribution state of Z...

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Bibliographic Details
Main Authors YU WEIDONG, QIU JIJUN, LI XIAOMIN, GAO XIANGDONG
Format Patent
LanguageChinese
English
Published 20.08.2008
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Summary:The invention relates to a method for controlling the array density of ZnO nanometer columns and is characterized in that the concentration ratio ((Zn<2+>)/M<x +>))) of Zinc ions and M<x+> ions in a system of a composite sol is controlled, particle sizes and distribution state of ZnO and MOx in a composite film are adjusted, and when a water solution method is used for preparing the array of ZnO nanometer columns, the adjustment of the array density of ZnO nanometer columns can be realized by the selective growth of the ZnO crystals in a seed crystal layer by a ZnO nanometer column crystal nucleus in a growth initial stage. The method for controlling the array density of ZnO nanometer columns is that a small amount of MOx sol and ZnO sol are mixed to form a stable composite sole after being stirred evenly, and then the composite sol is deposited on a substrate by a dip-coating method, and a Zno-MOx composite seed crystal layer is formed after heat treating. The Zno-MOx composite seed crystal layer is immersed
Bibliography:Application Number: CN2007137624