Field effect transistor multi-layer field plate device and method for making the same

The invention relates to the field of microwave power device technology in semiconductor material and discloses a method for fabricating an AlGaN/GaN high-electron mobility transistor (AlGaN/GaN HEMT) multilayer field plate device. The method comprises, based on common AlGaN/GaN HEMT device fabricat...

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Bibliographic Details
Main Authors WEI KE, LIU XINYU, ZHENG YINGKUI, LIU GUOGUO
Format Patent
LanguageChinese
English
Published 30.07.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention relates to the field of microwave power device technology in semiconductor material and discloses a method for fabricating an AlGaN/GaN high-electron mobility transistor (AlGaN/GaN HEMT) multilayer field plate device. The method comprises, based on common AlGaN/GaN HEMT device fabrication process, firstly fabricating a gate connection field plate after forming a gate metal contact, secondly fabricating a source connection field plate, and forming the AlGaN/GaN HEMT multilayer field plate device. The invention simultaneously discloses an AlGaN/GaN HEMT multilayer field plate device. The invention can greatly improve the breakdown characteristics of the AlGaN/GaN HEMT device and effectively suppress the current collapse of the AlGaN/GaN HEMT device.
Bibliography:Application Number: CN2007162987