Nonvolatile memory circuit and its design method

The invention relates to a non-volatile memory circuit and a design method thereof, wherein, the non-volatile storage area space inside the non-volatile memory circuit is divided; moreover, each sub-storage area is endowed with different device addresses; during practical operation, the circuit judg...

Full description

Saved in:
Bibliographic Details
Main Authors SHENG RONGHUA, FAN HONGMEI, YANG JIEWEI, WU HAIHONG, ZHU YUEYU, WANG YONG, LU JIAN, HU YAN
Format Patent
LanguageChinese
English
Published 04.06.2008
Subjects
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
PHYSICS
Online AccessGet full text

Cover

More Information
Summary:The invention relates to a non-volatile memory circuit and a design method thereof, wherein, the non-volatile storage area space inside the non-volatile memory circuit is divided; moreover, each sub-storage area is endowed with different device addresses; during practical operation, the circuit judges firstly the device address input from outside and then judges which sub-storage area is operated through the device addresses. The invention has relatively less stored data quantity of a single device; under the condition of more devices used, the invention can remarkably reduce use cost.
Bibliography:Application Number: CN20061118758