Integrated method for removal of halogen residues from etched substrates by thermal process

A method and system for removing volatile residues from a substrate are provided. In one embodiment, the volatile residues removal process is performed en-routed in the system while performing a halogen treatment process on the substrate. The volatile residues removal process is performed in the sys...

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Main Authors KAWAGUCHI MARK NAOSHI, WEN SANDY M, BAHNG KENNETH J, LILL THORSTEN, LO KIN PONG, DAVIS MATTHEW FENTON, HOOGENSEN BRETT CHRISTIAN, KIM STEVEN H
Format Patent
LanguageChinese
English
Published 20.07.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method and system for removing volatile residues from a substrate are provided. In one embodiment, the volatile residues removal process is performed en-routed in the system while performing a halogen treatment process on the substrate. The volatile residues removal process is performed in the system other than the halogen treatment processing chamber and a FOUP. In one embodiment, a method forvolatile residues from a substrate includes providing a processing system having a vacuum tight platform, processing a substrate in a processing chamber of the platform with a chemistry comprising halogen, and treating the processed substrate in the platform to release volatile residues from the treated substrate.
Bibliography:Application Number: CN20071165339