Method of fabricating an image sensor device with reduced pixel cross-talk

A method of fabricating an image sensor device ( 5 ) transferring an intensity of radiation ( 1 ) into an electrical current (i-i, a 2 ) depending on said intensity, comprising the following steps in a vacuum deposition device: Depositing onto a dielectric, insulating surface a matrix of electricall...

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Bibliographic Details
Main Authors TURLOT EMMANUEL, SALASCA OLIVIER
Format Patent
LanguageChinese
English
Published 20.02.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating an image sensor device ( 5 ) transferring an intensity of radiation ( 1 ) into an electrical current (i-i, a 2 ) depending on said intensity, comprising the following steps in a vacuum deposition device: Depositing onto a dielectric, insulating surface a matrix of electrically conducting pads ( 7 a , 7 b) as rear electrical contacts, plasma assisted exposing said surface with pads to a donor delivering gas without adding a silicon containing gas, depositing a layer ( 15 ) of intrinsic silicon from a silicon delivering gas depositing a doped layer ( 17 ) and arranging an electrically conductive layer ( 19 ) transparent for said radiation ( 1 ) as a front contact. The method of fabricating an image-sensor-device and the image-sensor-device are avoiding disadvantages of the prior art. This means the image-sensor-device of the invention has a good ohmic contact, a low dark-current, no pixel-cross-talk and a reproducible fabrication-process.
Bibliography:Application Number: CN200680006212