Method for manufacturing fuse box having vertically formed protective film

A method for manufacturing a fuse box of a semiconductor device includes forming an interlayer dielectric film over a semiconductor substrate including a given lower structure; forming a metal line and a fuse over the interlayer dielectric film; forming a first protective film over the resulting str...

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Bibliographic Details
Main Author CHOI KI SOO
Format Patent
LanguageChinese
English
Published 08.09.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for manufacturing a fuse box of a semiconductor device includes forming an interlayer dielectric film over a semiconductor substrate including a given lower structure; forming a metal line and a fuse over the interlayer dielectric film; forming a first protective film over the resulting structure; etching the first protective film and the fuse at a given depth by a photo-etching process with a repair mask to form an open region; and forming a second protective film vertical to the fuse.
Bibliography:Application Number: CN200710136306