Nitrogen ion beam assistant electric arc ion plating deposition TiAlN film layer process
The invention discloses a new TiAIN film sedimenting technique of auxiliary arc ion of nitrogen ion beam, which comprises the following steps: adopting nitrogen ion to plate; cleaning the working piece through alcohol solution; placing the working piece on the rotary disc in the vacuum chamber; extr...
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Main Author | |
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Format | Patent |
Language | English |
Published |
24.10.2007
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Subjects | |
Online Access | Get full text |
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Summary: | The invention discloses a new TiAIN film sedimenting technique of auxiliary arc ion of nitrogen ion beam, which comprises the following steps: adopting nitrogen ion to plate; cleaning the working piece through alcohol solution; placing the working piece on the rotary disc in the vacuum chamber; extracting the vacuum chamber into 10-2-10-3Pa; starting the rotary mechanism; rotating the rotary disc; aerating nitrogen into vacuum chamber and gas ion source chamber; exerting -550V for the working piece and 12KV for nitrogen in the gas ion source chamber with current strength at 6mA; bombarding the nitrogen ion on the working piece surface for 15min; evaporating titanium-aluminium alloy target; ionizing; sedimenting the film layer; aerating nitrogen with pressure at 3X102Pa in the vacuum chamber; proceeding nitrogen protection for 12 min. |
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Bibliography: | Application Number: CN2007111574 |