Etch resistant heater and assembly thereof

An etch resistant heater for use in a wafer processing assembly with an excellent ramp rate of at least 20 DEG C. per minute. The heater is coated with a protective overcoating layer allowing the heater to have a radiation efficiency above 70% at elevated heater temperatures of >1500 DEG C., and...

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Bibliographic Details
Main Author OTAKA AKINOBU,HIGUCHI TAKESHI,PRASAD SRIDHAR RAMAPRASAD,FAN WEI,SCHAEPKENS MARC,LONGWORTH DOUGLAS A
Format Patent
LanguageEnglish
Published 03.10.2007
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Summary:An etch resistant heater for use in a wafer processing assembly with an excellent ramp rate of at least 20 DEG C. per minute. The heater is coated with a protective overcoating layer allowing the heater to have a radiation efficiency above 70% at elevated heater temperatures of >1500 DEG C., and an etch rate in NF3 at 600 DEG C. of less than 100 A/min.
Bibliography:Application Number: CN20061172997