Electrode for phase change memory device and method

An electrode for a memory material of a phase change memory device is disclosed. The electrode includes a first layer adhered to the memory material, the first layer including a nitride (ANx), where A is one of titanium (Ti) and tungsten (W) and x greater than zero, but is less than 1.0, and a secon...

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Bibliographic Details
Main Author COTE DONNA R.,MAUTHE RONALD W.,WONG KEITH K. H
Format Patent
LanguageEnglish
Published 12.09.2007
Subjects
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