Electrode for phase change memory device and method
An electrode for a memory material of a phase change memory device is disclosed. The electrode includes a first layer adhered to the memory material, the first layer including a nitride (ANx), where A is one of titanium (Ti) and tungsten (W) and x greater than zero, but is less than 1.0, and a secon...
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Main Author | |
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Format | Patent |
Language | English |
Published |
12.09.2007
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Subjects | |
Online Access | Get full text |
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