Electrode for phase change memory device and method

An electrode for a memory material of a phase change memory device is disclosed. The electrode includes a first layer adhered to the memory material, the first layer including a nitride (ANx), where A is one of titanium (Ti) and tungsten (W) and x greater than zero, but is less than 1.0, and a secon...

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Bibliographic Details
Main Author COTE DONNA R.,MAUTHE RONALD W.,WONG KEITH K. H
Format Patent
LanguageEnglish
Published 12.09.2007
Subjects
ELECTRICITY
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Summary:An electrode for a memory material of a phase change memory device is disclosed. The electrode includes a first layer adhered to the memory material, the first layer including a nitride (ANx), where A is one of titanium (Ti) and tungsten (W) and x greater than zero, but is less than 1.0, and a second layer adhered to the first layer, the second layer including a nitride (ANy), where y is greater than or equal to 1.0. The multiple layer electrode allows the first layer to better adhere to chalcogenide based memory material, such as GST, than for example, stoichiometric TiN or WN, which prevents delamination. A phase change memory device and method are also disclosed.
Bibliography:Application Number: CN200710086122