Semiconductor device
A trench is formed on a semiconductor substrate. The trench is provided with a gate electrode part wherein a gate electrode is arranged, and a gate extracting part with which wiring for electrically connecting the gate electrode with the external is brought into contact. In the gate extracting part...
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| Main Author | |
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| Format | Patent |
| Language | English |
| Published |
05.09.2007
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A trench is formed on a semiconductor substrate. The trench is provided with a gate electrode part wherein a gate electrode is arranged, and a gate extracting part with which wiring for electrically connecting the gate electrode with the external is brought into contact. In the gate extracting part for electrically connecting the gate electrode with the external, the width of an end part of the trench is formed wider than that of other parts. |
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| AbstractList | A trench is formed on a semiconductor substrate. The trench is provided with a gate electrode part wherein a gate electrode is arranged, and a gate extracting part with which wiring for electrically connecting the gate electrode with the external is brought into contact. In the gate extracting part for electrically connecting the gate electrode with the external, the width of an end part of the trench is formed wider than that of other parts. |
| Author | MIZOKUCHI SHUJI,TSUNODA KAZUAKI |
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| Notes | Application Number: CN2005833111 |
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| PublicationYear | 2007 |
| RelatedCompanies | MATSUSHITA ELECTRIC IND CO., LTD |
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| Snippet | A trench is formed on a semiconductor substrate. The trench is provided with a gate electrode part wherein a gate electrode is arranged, and a gate extracting... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Semiconductor device |
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