Semiconductor device

A trench is formed on a semiconductor substrate. The trench is provided with a gate electrode part wherein a gate electrode is arranged, and a gate extracting part with which wiring for electrically connecting the gate electrode with the external is brought into contact. In the gate extracting part...

Full description

Saved in:
Bibliographic Details
Main Author MIZOKUCHI SHUJI,TSUNODA KAZUAKI
Format Patent
LanguageEnglish
Published 05.09.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A trench is formed on a semiconductor substrate. The trench is provided with a gate electrode part wherein a gate electrode is arranged, and a gate extracting part with which wiring for electrically connecting the gate electrode with the external is brought into contact. In the gate extracting part for electrically connecting the gate electrode with the external, the width of an end part of the trench is formed wider than that of other parts.
Bibliography:Application Number: CN2005833111