A magnetic memory element

The present invention provides a magnetic storage device, which can read and write information through metal wires. The magnetic storage device comprises: a plurality of first metal wires, arranged in parallel to each other on a substrate, with a continuous magnetic domain with magnetization directi...

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Bibliographic Details
Main Author SHIN SANG MIN,KIM YONG SU,PARK YOON DONG
Format Patent
LanguageEnglish
Published 05.09.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:The present invention provides a magnetic storage device, which can read and write information through metal wires. The magnetic storage device comprises: a plurality of first metal wires, arranged in parallel to each other on a substrate, with a continuous magnetic domain with magnetization direction reversible; a plurality of second metal wires, arranged on the substrate and orthogonally crossing the first metal wires, with tunnels through which the first metal wire pass; a first input unit, connected to the first metal wires and providing current to drag the magnetic domain; a second input unit, connected to the second metal wires and utilizing current to change magnetization direction in the magnetic domain in the tunnels; and, a detecting unit, connected to the second metal wires and designed to detect electro-dynamic potential caused by passing through the magnetic domain wall in the tunnels. Therefore, the magnetic storage device can be produced easily by laying metal wires crossing to each other on a substrate, and can read and write information accurately by identifying bit information on the basis of existence of induced electro-motive force.
Bibliography:Application Number: CN200610135956