Vertical structure semiconductor devices with improved light output

• Main Authors: YOO MYUNG C, YEOM GEUN Y, KIM DONG W
• Format: Patent
• Language: Chinese; English
• Published: 05.05.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a reliable technique to fabricate a new vertical structure compound semiconductor devices with highly improved light output. An exemplary embodiment of a method of fabricating light emitting semiconductor devices comprising the steps of forming a light emitting layer, and forming an undulated surface over light emitting layer to improve light output. In one embodiment, the method further comprises the step of forming a lens over the undulated surface of each of the semiconductor devices. In one embodiment, the method of claim further comprises the steps of forming a contact pad over the semiconductor structure to contact with the light emitting layer, and packaging each of the semiconductor devices in a package including an upper lead frame and lower lead frame. Advantages of the invention include an improved technique for fabricating semiconductor devices with great yield, reliability and light output.