Nonvolatile memory device and its operating method

Provided are a storage node, a nonvolatile memory device, methods of fabricating the same and a method of operating the nonvolatile memory device. The storage node may include a lower metal layer and a first insulation layer, an intermediate metal layer, a second insulation layer, an upper metal lay...

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Bibliographic Details
Main Author MOON CHANG-WOOK,LEE EUN-HONG,CHO CHOONG-RAE,LEE SEOUNG-UN
Format Patent
LanguageEnglish
Published 29.08.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:Provided are a storage node, a nonvolatile memory device, methods of fabricating the same and a method of operating the nonvolatile memory device. The storage node may include a lower metal layer and a first insulation layer, an intermediate metal layer, a second insulation layer, an upper metal layer and a nano layer, which are sequentially stacked on the lower metal layer. The nonvolatile memory device may include a switching device and the storage node connected to the switching device.
Bibliography:Application Number: CN200610136107