Semiconductor device having vertical channel and method of manufacturing the same
A semiconductor device having a vertical channel capable of reducing the interface contact resistance between a gate electrode surrounding an active pillar and a word line connecting the gate electrode and a method of manufacturing the same is provided. The semiconductor device includes a plurality...
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Main Author | |
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Format | Patent |
Language | English |
Published |
15.08.2007
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor device having a vertical channel capable of reducing the interface contact resistance between a gate electrode surrounding an active pillar and a word line connecting the gate electrode and a method of manufacturing the same is provided. The semiconductor device includes a plurality of active pillars extending in a direction perpendicular to a surface of a semiconductor substrate. A word line structure is formed on an outer periphery for connecting the active pillars disposed in the same row or column. Top and bottom source/drain regions are formed over and under the active pillars, respectively, in relation to the word line structure. |
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Bibliography: | Application Number: CN200710004792 |