Semiconductor device having vertical channel and method of manufacturing the same

A semiconductor device having a vertical channel capable of reducing the interface contact resistance between a gate electrode surrounding an active pillar and a word line connecting the gate electrode and a method of manufacturing the same is provided. The semiconductor device includes a plurality...

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Bibliographic Details
Main Author YOON JAE MAN,SEO HYEOUNG WON,LEE KANG YOON,KIM BONG SOO
Format Patent
LanguageEnglish
Published 15.08.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device having a vertical channel capable of reducing the interface contact resistance between a gate electrode surrounding an active pillar and a word line connecting the gate electrode and a method of manufacturing the same is provided. The semiconductor device includes a plurality of active pillars extending in a direction perpendicular to a surface of a semiconductor substrate. A word line structure is formed on an outer periphery for connecting the active pillars disposed in the same row or column. Top and bottom source/drain regions are formed over and under the active pillars, respectively, in relation to the word line structure.
Bibliography:Application Number: CN200710004792