Eeprom devices and methods of operating and fabricating the same

In one aspect, an electrically erasable and programmable read-only memory (EEPROM) is provided. The EEPROM includes a semiconductor substrate including spaced apart first, second and third active regions, a common floating gate traversing over the first through third active regions, source/drain reg...

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Bibliographic Details
Main Author PARK GEUN-SOOK,YI SANG-BAE,LEE SOOOL,HWANG HO-IK,LEE TAE-JUNG
Format Patent
LanguageEnglish
Published 08.08.2007
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:In one aspect, an electrically erasable and programmable read-only memory (EEPROM) is provided. The EEPROM includes a semiconductor substrate including spaced apart first, second and third active regions, a common floating gate traversing over the first through third active regions, source/drain regions formed in the third active region on opposite sides of the floating gate, a first interconnect connected to the first active region, a second interconnect connected to the second active region, and a third interconnect connected to either one of the source/drain regions.
Bibliography:Application Number: CN200610064394