Semiconductor devices and method of manufacturing the same

The invention relates to a semiconductor device and a method for manufacturing the same. CMOS semiconductor devices having dual work function metal gate structures that are formed using fabrication techniques that enable independent work function control for PMOS and NMOS device and which significan...

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Bibliographic Details
Main Author JUNG HYUNG-SUK,LEE JONG-HO,HAN SUNG-KEE,KIM JU-YOUN,PARK JUNG-MIN
Format Patent
LanguageEnglish
Published 08.08.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention relates to a semiconductor device and a method for manufacturing the same. CMOS semiconductor devices having dual work function metal gate structures that are formed using fabrication techniques that enable independent work function control for PMOS and NMOS device and which significantly reduce or otherwise eliminate impact on gate dielectric reliability.
Bibliography:Application Number: CN200710006116