Broad spectrum indium arsenide/gallium indium arsenide/ gallium arsenide quanta point material growth method

• Main Author: NING,JIN LIU
• Format: Patent
• Language: English
• Published: 01.08.2007
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; POLISHES; SEMICONDUCTOR DEVICES

The invention relates to a method for growing a wide- spectrum indium arsenide/ indium arsenide gallium/ gallium arsenide quantum material, comprising following steps: preparing gallium arsenide buffer layer on substrate, the buffer layer is the lower barrier layer for active region hereinafter; pre...