Broad spectrum indium arsenide/gallium indium arsenide/ gallium arsenide quanta point material growth method

The invention relates to a method for growing a wide- spectrum indium arsenide/ indium arsenide gallium/ gallium arsenide quantum material, comprising following steps: preparing gallium arsenide buffer layer on substrate, the buffer layer is the lower barrier layer for active region hereinafter; pre...

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Bibliographic Details
Main Author NING,JIN LIU
Format Patent
LanguageEnglish
Published 01.08.2007
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
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Summary:The invention relates to a method for growing a wide- spectrum indium arsenide/ indium arsenide gallium/ gallium arsenide quantum material, comprising following steps: preparing gallium arsenide buffer layer on substrate, the buffer layer is the lower barrier layer for active region hereinafter; preparing active region on gallium arsenide buffer layer, said active region is the core part of said indium arsenide/ indium arsenide gallium/ gallium arsenide quantum material,, and is the spectrum emitting area; preparing low- temperature gallium arsenide covering layer on active reigon, which is the upper barrier layer for said active region; preparing high- temperature gallium arsenide covering layer on low- temperature gallium arsenide covering layer, which is the outermost layer for said indium arsenide/ indium arsenide gallium/ gallium arsenide quantum materia, and it is protective. The invention can be used for design and epitaxial growth for semi- conductor apparatus such as super-radiant luminotron which needs wide- spectrum.
Bibliography:Application Number: CN2006102667