Manufacturing method of T or gamma gate electrode

• Main Author: AHN HO KYUN,LIM JONG WON,MUN JAE KYOUNG,CHANG WOOJIN,JI HONG GU,KIM HEA CHEON
• Format: Patent
• Language: English
• Published: 25.07.2007
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of forming a fine T- or gamma-shaped gate electrode is provided, which is performed by a lithography process using a multi-layered photoresist layer having various sensitivities, deposition of an insulating layer, and an etching process. The method includes: a first step of depositing a first insulating layer on a semiconductor substrate; a second step of coating at least two photoresist layers with different sensitivities from each other on the first insulating layer, and patterning the photoresist layers to have openings which are different in size; a third step of etching the first insulating layer using the photoresist layers as etch masks to form a step hole in which a part contacting the substrate is narrower than an upper part thereof, and removing the photoresist layers; a fourth step of forming a photoresist layer on the first insulating layer, and forming an opening in the photoresist layer to have a T- or gamma-shaped gate head pattern; a fifth step of performing a gate recess process with respect to the gate pattern; and a sixth step of depositing a gate metal on the gate pattern, and removing the photoresist layers.