Method for fabrication lateral semiconductor device

A lateral junction semiconductor device and method for fabricating the same comprising the steps of taking a semiconductor structure (2) having a stack formed by a plurality of layers of semiconductor material arranged in a series of substantially parallel planes, the semiconductor material within a...

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Bibliographic Details
Main Author NASH GEOFFREY RICHARD,JEFFERSON JOHN HENRY,NASH KEITH JAMES
Format Patent
LanguageEnglish
Published 18.07.2007
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A lateral junction semiconductor device and method for fabricating the same comprising the steps of taking a semiconductor structure (2) having a stack formed by a plurality of layers of semiconductor material arranged in a series of substantially parallel planes, the semiconductor material within a first layer (4) having an excess of charge carriers of a first polarity at a first concentration, and selectively removing semiconductor material from the first layer (4) to a depth which varies along a first direction substantially parallel with the planes of the layers within the structure, so as to provide a gradation of the concentration of charge carriers of first polarity within an active layer (8) along the first direction. A photon source comprising said lateral junction semiconductor device.
Bibliography:Application Number: CN200580026962