Method of production of charge-trapping memory devices

The surfaces of wordline stacks and intermediate areas of a main substrate surface are covered with an oxynitride liner. Either sidewall spacers of BPSG are formed or a further liner of nitride is deposited and spacers of oxide are formed. These spacers are used in a peripheral area of addressing ci...

Full description

Saved in:
Bibliographic Details
Main Authors DEPPE JOACHIM, MACHILL STEFAN, LUDWIG CHRISTOPH, WEIN GUNTHER, ISLER MARK, KRAUSE MATHIAS
Format Patent
LanguageChinese
English
Published 28.05.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

Abstract The surfaces of wordline stacks and intermediate areas of a main substrate surface are covered with an oxynitride liner. Either sidewall spacers of BPSG are formed or a further liner of nitride is deposited and spacers of oxide are formed. These spacers are used in a peripheral area of addressing circuitry to implant doped source/drain regions. The oxynitride reduces the stress between the nitride and the semiconductor material and prevents charge carriers from penetrating out of a memory layer of nitride into the liner.
AbstractList The surfaces of wordline stacks and intermediate areas of a main substrate surface are covered with an oxynitride liner. Either sidewall spacers of BPSG are formed or a further liner of nitride is deposited and spacers of oxide are formed. These spacers are used in a peripheral area of addressing circuitry to implant doped source/drain regions. The oxynitride reduces the stress between the nitride and the semiconductor material and prevents charge carriers from penetrating out of a memory layer of nitride into the liner.
Author LUDWIG CHRISTOPH
KRAUSE MATHIAS
ISLER MARK
WEIN GUNTHER
DEPPE JOACHIM
MACHILL STEFAN
Author_xml – fullname: DEPPE JOACHIM
– fullname: MACHILL STEFAN
– fullname: LUDWIG CHRISTOPH
– fullname: WEIN GUNTHER
– fullname: ISLER MARK
– fullname: KRAUSE MATHIAS
BookMark eNrjYmDJy89L5WQw800tychPUchPUygoyk8pTS7JzM8D8ZIzEovSU3VLihILCjLz0hVyU3PziyoVUlLLMpNTi3kYWNMSc4pTeaE0N4OSm2uIs4duakF-fGpxQWJyal5qSbyzn6GBgbGlgaWZubOzMVGKAAXTL_c
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID CN100390967CC
GroupedDBID EVB
ID FETCH-epo_espacenet_CN100390967CC3
IEDL.DBID EVB
IngestDate Fri Sep 06 06:12:06 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language Chinese
English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_CN100390967CC3
Notes Application Number: CN200610071967
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080528&DB=EPODOC&CC=CN&NR=100390967C
ParticipantIDs epo_espacenet_CN100390967CC
PublicationCentury 2000
PublicationDate 20080528
PublicationDateYYYYMMDD 2008-05-28
PublicationDate_xml – month: 05
  year: 2008
  text: 20080528
  day: 28
PublicationDecade 2000
PublicationYear 2008
RelatedCompanies INFINEON TECHNOLOGIES AG
RelatedCompanies_xml – name: INFINEON TECHNOLOGIES AG
Score 2.8087845
Snippet The surfaces of wordline stacks and intermediate areas of a main substrate surface are covered with an oxynitride liner. Either sidewall spacers of BPSG are...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Method of production of charge-trapping memory devices
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080528&DB=EPODOC&locale=&CC=CN&NR=100390967C
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_mFPVNp6JOpYj0rdi1Tds9FGFpyxDaDZmyt5G26VSwLVtF9K_3kq3Op73lA45L4L6Su98B3GVZoruMcc1IEwxQ8pxpjBCisRR9CZ4audMTtcNRbA-frccpmbbgvamFkTihXxIcESUqRXmvpb6uNo9YvsytXN4nb7hUPoQTz1eb6FgA9LuqP_CC8cgfUZVSj8Zq_IS-ro7Rfd926A7sCjda4OwHLwNRlVL9NynhEeyNkVpRH0Pr57UDB7TpvNaB_Wj94Y3DtewtT8COZLNnpcyVagXTilyKmQQ74lq9YAJrYa58iOTZbyXjUgmcwm0YTOhQQwZmf6ed0XjDKzXPoF2UBT8HpcdNy3QyjF-YbbF-mpBE7zHGLDPVGTH4BXS3ELrcutuFw1UeBNEM9wra9eKTX6OxrZMbeUu_ceKEbg
link.rule.ids 230,309,786,891,25594,76903
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5qFetNq1KtjyCSWzCvTdJDELppqdqkRaL0FjbJxgeYhjYi-uudbFvrqbd9wDK7MDP77c58A3CdprHqMMYVPYkRoGQZUxghRGEJ3iV4ome2VuUO-4E1eDLvJ2RSg_dVLozgCf0S5IioUQnqeynsdbF-xPJEbOX8Jn7DoeltP3Q9eYWOK4J-R_a6bm888kZUptSlgRw84l1XRXTfsWy6Bds2QkIBlZ67VVZK8d-l9PdhZ4yr5eUB1H5em9Cgq8prTdj1lx_e2Fzq3vwQLF8Ue5ammVQsaFpRyqonyI64Us5YxbXwIn1UwbPfUsqFETiCq34vpAMFBYj-dhvRYC0rNY6hnk9z3gJJ44Zp2CniF2aZrJPEJFY1xphpJCojOj-B9oaFTjfOXkJjEPrDaHgXPLRhbxETQRTdOYN6Ofvk5-h4y_hCnNgvx9SHWA
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Method+of+production+of+charge-trapping+memory+devices&rft.inventor=DEPPE+JOACHIM&rft.inventor=MACHILL+STEFAN&rft.inventor=LUDWIG+CHRISTOPH&rft.inventor=WEIN+GUNTHER&rft.inventor=ISLER+MARK&rft.inventor=KRAUSE+MATHIAS&rft.date=2008-05-28&rft.externalDBID=C&rft.externalDocID=CN100390967CC