Method of production of charge-trapping memory devices

The surfaces of wordline stacks and intermediate areas of a main substrate surface are covered with an oxynitride liner. Either sidewall spacers of BPSG are formed or a further liner of nitride is deposited and spacers of oxide are formed. These spacers are used in a peripheral area of addressing ci...

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Bibliographic Details
Main Authors DEPPE JOACHIM, MACHILL STEFAN, LUDWIG CHRISTOPH, WEIN GUNTHER, ISLER MARK, KRAUSE MATHIAS
Format Patent
LanguageChinese
English
Published 28.05.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The surfaces of wordline stacks and intermediate areas of a main substrate surface are covered with an oxynitride liner. Either sidewall spacers of BPSG are formed or a further liner of nitride is deposited and spacers of oxide are formed. These spacers are used in a peripheral area of addressing circuitry to implant doped source/drain regions. The oxynitride reduces the stress between the nitride and the semiconductor material and prevents charge carriers from penetrating out of a memory layer of nitride into the liner.
Bibliography:Application Number: CN200610071967