Method of production of charge-trapping memory devices
The surfaces of wordline stacks and intermediate areas of a main substrate surface are covered with an oxynitride liner. Either sidewall spacers of BPSG are formed or a further liner of nitride is deposited and spacers of oxide are formed. These spacers are used in a peripheral area of addressing ci...
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Main Authors | , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
28.05.2008
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Subjects | |
Online Access | Get full text |
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Summary: | The surfaces of wordline stacks and intermediate areas of a main substrate surface are covered with an oxynitride liner. Either sidewall spacers of BPSG are formed or a further liner of nitride is deposited and spacers of oxide are formed. These spacers are used in a peripheral area of addressing circuitry to implant doped source/drain regions. The oxynitride reduces the stress between the nitride and the semiconductor material and prevents charge carriers from penetrating out of a memory layer of nitride into the liner. |
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Bibliography: | Application Number: CN200610071967 |