TaWN film in copper interlinked barrier layer material
A TaWN film used as the barrier material of copper interconnection contains W (13.6-22.7 Wt%), N (9) and Ta (rest). Its advantages are high adhesion and high power to resist against electronic migration.
Saved in:
| Main Authors | , , , , |
|---|---|
| Format | Patent |
| Language | Chinese English |
| Published |
16.04.2008
|
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | A TaWN film used as the barrier material of copper interconnection contains W (13.6-22.7 Wt%), N (9) and Ta (rest). Its advantages are high adhesion and high power to resist against electronic migration. |
|---|---|
| AbstractList | A TaWN film used as the barrier material of copper interconnection contains W (13.6-22.7 Wt%), N (9) and Ta (rest). Its advantages are high adhesion and high power to resist against electronic migration. |
| Author | CHEN SHOUMIAN YANG CHUNSHENG LI MING LING HUIQIN MAO DALI |
| Author_xml | – fullname: CHEN SHOUMIAN – fullname: MAO DALI – fullname: LI MING – fullname: YANG CHUNSHENG – fullname: LING HUIQIN |
| BookMark | eNrjYmDJy89L5WQwC0kM91NIy8zJVcjMU0jOLyhILQKySlKLcjLzslNTFJISi4oygWI5iZVAMjcRKJOZmMPDwJqWmFOcyguluRmU3FxDnD10Uwvy41OLCxKTU_NSS-Kd_QwNDIwtDM0MLJ2djYlSBADSQy-N |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences |
| ExternalDocumentID | CN100381609CC |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_CN100381609CC3 |
| IEDL.DBID | EVB |
| IngestDate | Fri Jul 19 16:01:21 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | Chinese English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_CN100381609CC3 |
| Notes | Application Number: CN200510030978 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080416&DB=EPODOC&CC=CN&NR=100381609C |
| ParticipantIDs | epo_espacenet_CN100381609CC |
| PublicationCentury | 2000 |
| PublicationDate | 20080416 |
| PublicationDateYYYYMMDD | 2008-04-16 |
| PublicationDate_xml | – month: 04 year: 2008 text: 20080416 day: 16 |
| PublicationDecade | 2000 |
| PublicationYear | 2008 |
| RelatedCompanies | SHANGHAI JIAOTONG UNIV |
| RelatedCompanies_xml | – name: SHANGHAI JIAOTONG UNIV |
| Score | 2.8044932 |
| Snippet | A TaWN film used as the barrier material of copper interconnection contains W (13.6-22.7 Wt%), N (9) and Ta (rest). Its advantages are high adhesion and high... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| Title | TaWN film in copper interlinked barrier layer material |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080416&DB=EPODOC&locale=&CC=CN&NR=100381609C |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1RS8MwED7mFPVNp6JOJYj0LdhubZY-DGFpxxDWDam6t9E2KavOrmwVwV9vElfn095CAscl5HJ3ubvvAO5i3qEWSUycmo7ACvAOuy53sMtjnrYiIqJYFQoPAzJ4th8nzqQGb1UtjMYJ_dLgiFKiEinvpX6vi80nlqdzK1f3cSanFg_9sOsZlXes0HSI4fW6_njkjZjBWJcFRvAkbV0dIjNdtgO70ozuKGnwX3qqKqX4r1L6R7A3ltTy8hhq37MGHLCq81oD9ofrgLccrmVvdQIkjF4DlGbzD5TlKFkUhVgihfag8KreBUdxtFTt59A8kmY0kpaovlyncNv3QzbAkoHp326nLNjwytpnUM8XuTgHRHmb2k7LThKa2kRYbpIKSgk1ReRw6ehcQHMLocutq004_M2DsLFFrqBeLj_FtVS2ZXyjT-kHQp6DYQ |
| link.rule.ids | 230,309,783,888,25576,76876 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEL8gGvFNUYPiR2PM3hYHbKV7WEzoIKhsEDOVN7KtXURxLGPGxL_etoL4xFvTJpdr0-vd9e5-B3AdsTZp4NjQE8PiugS8022bWbrNIpY0Q8zDSBYKez7uP5n3Y2tcgrdVLYzCCf1S4IhComIh74V6r7P1J5arcisXN9FUTM1ve4HjaivvWKLpYM3tON3R0B1SjVKH-pr_KGxdFSIzbLoF28LEbktp6D53ZFVK9l-l9PZhZySopcUBlL5fq1Chq85rVdj1lgFvMVzK3uIQcBC--CiZzj7QNEXxPMt4jiTag8SreucMRWEu28-hWSjMaCQsUXW5juCq1w1oXxcMTP52O6H-mlfaOoZyOk95DRBhLWJaTTOOSWJi3rDjhBOCicFDiwlH5wTqGwidbly9hEo_8AaTwZ3_UIe935wIU2_gMygX-Sc_F4q3iC7Uif0AlyyGVA |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=TaWN+film+in+copper+interlinked+barrier+layer+material&rft.inventor=CHEN+SHOUMIAN&rft.inventor=MAO+DALI&rft.inventor=LI+MING&rft.inventor=YANG+CHUNSHENG&rft.inventor=LING+HUIQIN&rft.date=2008-04-16&rft.externalDBID=C&rft.externalDocID=CN100381609CC |